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Si7945DP
Vishay Siliconix
Dual P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
V DS (V)
- 30
R DS(on) ( Ω )
0.020 at V GS = - 10 V
0.031 at V GS = - 4.5 V
I D (A)
- 10.9
- 8.8
Q g (Typ.)
49
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFETs
? New Low Thermal Resistance PowerPAK ?
Package with Low 1.07 mm Profile
APPLICATIONS
PowerPAK SO-8
? Battery and Load Switching
- Notebook PCs
- Game Systems
6.15 mm
1
S1
2
G1
S2
5.15 mm
- Set-Top Box
S 1
S 2
D1
3
4
G2
8
D1
G 1
G 2
7
D2
6
D2
5
Bottom View
Ordering Information: Si7945DP-T1-E3 (Lead (Pb)-free)
Si7945DP-T1-GE3 (Lead (Pb)-free and Halogen-free)
D 1
P-Channel MOSFET
D 2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Symbol
V DS
V GS
10 s
Steady State
- 30
± 20
Unit
V
Continuous Drain Current (T J = 150 °C) a
Pulsed Drain Current
Continuous Source Current (Diode Conduction) a
Maximum Power Dissipation a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) b, c
T A = 25 °C
T A = 70 °C
T A = 25 °C
T A = 70 °C
I D
I DM
I S
P D
T J , T stg
- 10.9 - 7.0
- 8.7 - 5.6
- 30
- 2.9 - 1.2
3.5 1.4
2.2 0.9
- 55 to 150
260
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient a
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
Steady State
R thJA
R thJC
26
60
2.5
35
85
3.1
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72090
S09-0227-Rev. D, 09-Feb-09
www.vishay.com
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